Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta‐doping layers
Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta‐doping layers
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DOI：
10.1002/mop.26071
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发表时间：
2011-07
影响因子：
1.5
通讯作者：
Chong Li;A. Khalid;Sonia H. Paluchowski Caldwell;N. Pilgrim;M. Holland;G. Dunn;D. Cumming
中科院分区：
文献类型：
--
作者：
Chong Li;A. Khalid;Sonia H. Paluchowski Caldwell;N. Pilgrim;M. Holland;G. Dunn;D. Cumming
对GaAs/AlGaAs异质结结构中GaAs沟道两侧各有一层和两层δ掺杂层的平面古恩效应二极管进行了数值研究和实验验证。结果表明，当使用双δ掺杂技术时，RF功率和振荡频率增强。通过使用二维数值模拟工具，研究了导带分布、外延层中的电子浓度和电流-电压特性。模拟结果表明，额外的δ掺杂层增加了导电沟道中的电子约束，因此获得了更高的电流水平。两种情况下的模拟电流-电压特性与实验结果吻合良好。© 2011 Wiley Periodicals，Inc.微波光学技术快报，2011年;在wileyonlinelibrary.com上在线查看这篇文章。DOI 10.1002/mop.26071
Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ‐doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double δ‐doping technique was used. By using a two‐dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current‐voltage characteristics are investigated. Simulation results indicate that extra δ‐doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current‐voltage characteristics in both cases agree well with experimental results. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26071