Semiconducting rhenium silicide thin films on Si(111)
Semiconducting rhenium silicide thin films on Si(111)
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Si(111) 上的半导体硅化铼薄膜
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
M. Brunel
中科院分区：
文献类型：
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作者：
T. Tan;J. Veuillen;P. Muret;S. Kennou;A. Siokou;S. Ladas;F. Razafindramisa;M. Brunel
通过低能电子衍射（LEED）和光电子能谱（XPS和UPS）原位研究了ReSi 2薄膜（120 -300 A）的晶体学、电子学和光学性质，并通过掠入射X射线衍射（GIXD）和光学吸收测量进行了非原位研究。在室温或650 °C加热条件下，在高真空下在Si（111）（7×7）表面上蒸发薄Re层。随后，在增加的高温下退火的薄膜和硅化物的形成，其次是在原位表面技术。对于非常薄的薄膜（1035 A），LEED在750 °C退火后显示出微弱的（1×1）图案，在10900 °C退火后略有改善。对于厚膜（150 -300 A），仅观察到明亮的背景。XPS表明在600 °C下退火后获得ReSi 2组成。在Re-Si键中，电荷转移是可以忽略的：核心（Si 2 p和Re 4f）的能量位置在化合物和元素中是相同的。作为能源…
The crystallographic, electronic, and optical properties of thin ReSi2 films (∼20–300 A) have been investigated in situ by low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS and UPS), ex situ by glancing incidence x‐ray diffraction (GIXD), and optical absorption measurements. Thin Re layers were evaporated under ultrahigh vacuum on Si(111) (7×7) surfaces, maintained at room temperature, or heated at 650 °C. The films were subsequently annealed at increasing high temperature and the silicide formation was followed by in situ surface techniques. For very thin films (≲35 A) LEED shows a faint (1×1) pattern after annealing at 750 °C, which improves slightly up to ∼900 °C. For thick films (∼50–300 A) only a bright background is observed. XPS indicates that the ReSi2 composition is attained upon annealing at 600 °C. In the Re‐Si bonding the charge transfer is negligible: the energy positions of the corelevels (Si 2p and Re 4f) are the same in the compound and in the elements. As the ener...