A Transmission Line Model for the Evaluation of MRI RF-Induced Fields on Active Implantable Medical Devices

A Transmission Line Model for the Evaluation of MRI RF-Induced Fields on Active Implantable Medical Devices
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用于评估有源植入医疗设备上 MRI 射频感应场的传输线模型

DOI:
10.1109/tmtt.2018.2851975
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发表时间:
2018
影响因子:
4.3
通讯作者:
Ji Chen
Ji Chen
中科院分区:
工程技术1区
文献类型:
--
作者:
Jingshen Liu;Jianfeng Zheng;Qingyan Wang;W. Kainz;Ji Chen

文献摘要

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本文应用传输线模型对有源植入式医疗器械(AIMD)的磁共振成像(MRI)射频(RF)感应场进行了评估。基于该模型分析了AIMD电极导线主体、电极导线头端和植入式脉冲发生器(IPG)的影响。传输线模型与传递函数方法一起形成了分析MRI RF安全问题的系统方法。它可用于了解各种IPG和电极导线的机制并预测MRI射频安全风险。数值模拟和测量结果表明了该方法的准确性和有效性。
In this paper, a transmission line model is applied to evaluate magnetic resonance imaging (MRI) radio frequency (RF)-induced fields on active implantable medical devices (AIMDs). The influences of the AIMD lead body, the lead tip, and the implantable pulse generator (IPG) are analyzed based on this model. The transmission line model, together with the transfer function method, forms a systematic approach for analyzing the MRI RF safety problems. It can be used to understand the mechanisms and predict the MRI RF safety risks for various IPGs and leads. Both numerical simulation and measurement results demonstrate the accuracy and the efficiency of this method.