Characteristics of laser-annealed ZnO thin film transistors
Characteristics of laser-annealed ZnO thin film transistors
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DOI：
10.1016/j.tsf.2009.09.190
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发表时间：
2010-03-31
期刊：
影响因子：
2.1
通讯作者：
Lee, Won-Jae
中科院分区：
文献类型：
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作者：
Kim, Jun-Je;Bak, Jun-Yong;Lee, Won-Jae
研究了激光退火对ZnO薄膜晶体管（TFT）的影响。在室温下用射频溅射法在底栅图案化的Si衬底上沉积ZnO薄膜，激光退火使ZnO（002）衍射峰的半高宽从0.49 °减小到0.1 °。结果表明，退火效应改善了ZnO薄膜的晶体质量，采用低温形成的SiO2作为栅介质，未退火的ZnO薄膜晶体管工作在增强模式，阈值电压为21.6V，场效应迁移率为0.004cm（2）/Vs，开关电流比为134。200个激光脉冲使TFT的阈值电压降低到0 6 V，场效应迁移率提高到5 0 8 cm（2）/Vs，迁移率的提高源于激光退火后ZnO薄膜的晶化增强（C）2009 Elsevier B V All rights reserved
We investigated the effects of laser annealing on ZnO thin film transistors (TFTs). ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency sputtering at room temperature Laser annealing of the ZnO films reduced the full width at half maximum of the ZnO (002) diffraction peak from 0 49 degrees to 0.1 degrees. It reveals that the crystalline quality is improved by annealing effect A SiO2 formed in low temperature was used as the gate dielectric Unannealed ZnO-TFTs were operated in enhancement mode with a threshold voltage of 21 6 V They had a field-effect mobility of 0 004 cm(2)/Vs and an on/off current ratio of 134 Laser annealing of the ZnO-TFTs by 200 laser pulses reduced their threshold voltage to 0 6 V and increased their field-effect mobility to 5 08 cm(2)/Vs The increase of mobility is originated from the crystallization enhancement of ZnO films after laser annealing (C) 2009 Elsevier B V All rights reserved