Effect of temperature and incident ion energy on nanostructure formation on silicon exposed to helium plasma
Effect of temperature and incident ion energy on nanostructure formation on silicon exposed to helium plasma
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DOI：
10.1002/ppap.202000126
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发表时间：
2020-09
影响因子：
3.5
通讯作者：
M. Thompson;Q. Shi;S. Kajita;N. Ohno;C. Corr
中科院分区：
文献类型：
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作者：
M. Thompson;Q. Shi;S. Kajita;N. Ohno;C. Corr
氦等离子体可用于传输低能量(<；100 eV)氦离子，以刺激硅表面纳米结构的生长。这可以产生广泛的表面特征，包括纳米级粗糙、纳米线和多孔结构。在这项研究中，纳米结构的尺寸从∼10到超过100 nm不等。我们还研究了这些结构对光伏和光催化应用中表面反射率的影响。在所研究的300-1,200 nm波长范围内，硅在600°C的氦等离子体中实现了对光反射率的宽带抑制，当入射氦离子能量为42和62 eV时，平均反射率分别为3.2%和2.9%。
Helium plasma can be used to deliver low‐energy (<100 eV) helium ions to stimulate the growth of nanostructures on silicon surfaces. This can produce a wide range of surface features including nanoscale roughening, nanowires and porous structures. In this study, nanostructure sizes varied from ∼10 to over 100 nm in diameter. The effect of these structures on surface reflectivity for photovoltaic and photocatalytic applications is also investigated. Broadband suppression of photoreflectivity is achieved across the 300–1,200 nm wavelength range studied for silicon exposed to helium plasma at 600°C, with an average reflectivity of 3.2% and 2.9% for incident helium ion energies of 42 and 62 eV, respectively.