High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
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DOI：
10.1143/apex.3.121004
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Narayanan, E. M. Sankara
中科院分区：
文献类型：
--
作者：
Nakajima, Akira;Sumida, Yasunobu;Narayanan, E. M. Sankara
首次在GaN/AlGaN异质结中发现了电荷密度为1：1 × 10 ~（13）cm ~（-2）的高密度二维空穴气（2DHG）。2DHG是由GaN/AlGaN界面处的负极化电荷引起的。根据理论模拟结果设计了层结构，以最大化2DHG电荷密度。采用金属有机物化学气相沉积法在蓝宝石衬底上生长了异质结构。在室温下测得2DHG的霍耳迁移率为16 cm（2）V（-1）s（-1），方块电阻为35 k Ω/sq。(C)2010日本应用物理学会
High density two dimensional hole gas (2DHG) with a charge density of 1: 1 x 1013 cm(-2) has been demonstrated for the first time in GaN/AlGaN heterostructures. The 2DHG is induced by negative polarization charges at the GaN/AlGaN interface. The layer structures have been designed based on theoretical simulation results to maximize the 2DHG charge density. The heterostructures have been grown on sapphire substrate by metal organic chemical vapor deposition. Hall mobility of the 2DHG of 16 cm(2) V(-1) s(-1) has been measured at room temperature with sheet resistance of 35 k Omega/sq. (C) 2010 The Japan Society of Applied Physics