Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel
Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel
复制标题
具有深亚微米沟道的低温工作 MOSFET 的温度调节理论
DOI：
10.1143/jjap.27.l1958
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发表时间：
1988
影响因子：
1.5
通讯作者：
N. Mikoshiba
中科院分区：
文献类型：
--
作者：
You;K. Masu;K. Tsubouchi;N. Mikoshiba
本文提出了液氮温度下深亚微米沟道MOSFET优化设计的新原理。MOSFET的电流-电压特性与工作温度成比例地减小，而移动的载流子的分布保持恒定。二维模拟的结果证实了我们的标度理论。本文还提出了一个由温度标度律和量纲标度律组成的组合标度律。
A novel principle is suggested for the optimum design of deep-submicron channel MOSFET operated at liquid-nitrogen temperature. Current-voltage characteristics of MOSFET are scaled down in proportion to operation temperature, while the distribution of the mobile carrier is kept constant. The results of a two-dimensional simulation confirm our scaling theory. A combination scaling law is also suggested which comprises the temperature-scaling law and a dimensional scaling law.