Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
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DOI：
10.1016/j.msea.2006.07.015
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发表时间：
2006-11-05
期刊：
影响因子：
6.4
通讯作者：
Faraone, L.
中科院分区：
文献类型：
--
作者：
Huang, H.;Winchester, K. J.;Faraone, L.
利用纳米压痕技术研究了沉积条件对低温PECVD氮化硅薄膜的力学性能（弹性模量和硬度）的影响。结果表明，提高衬底温度、提高等离子体功率和降低腔室气压均能提高薄膜的弹性模量和硬度。力学性能和膜密度之间的强相关性被证明。氮化硅的密度又被证明是有关的薄膜的化学成分，特别是硅/氮比。(c)2006 Elsevier B. V.保留所有权利。
The effect of deposition conditions on characteristic mechanical properties - elastic modulus and hardness - of low-temperature PECVD silicon nitrides is investigated using nanoindentation. lt is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio. (c) 2006 Elsevier B.V. All rights reserved.