Characteristics of Gd2-xLaxO3 high-k films by metal-organic chemical vapor deposition
Characteristics of Gd2-xLaxO3 high-k films by metal-organic chemical vapor deposition
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金属有机化学气相沉积Gd2-xLaxO3高k薄膜的特性
DOI：
10.1016/j.mee.2011.12.018
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发表时间：
2012-06-01
影响因子：
2.3
通讯作者：
Wu, Di
中科院分区：
文献类型：
--
作者：
Huang, Liu-Ying;Li, Ai-Dong;Wu, Di
通过低压金属有机化学气相沉积 (MOCVD) 在 (100) Si 衬底上沉积 Gd2-xLaxO3 高 k 薄膜。我们使用的金属有机前体是 Gd 和 La β-二酮酸盐。研究了Gd2-xLaxO3薄膜的结构、带隙、成分和电性能。 X射线衍射图表明，Si上沉积的Gd2-xLaxO3厚膜形成了具有(222)择优取向的固溶体立方相。使用紫外-可见-近红外分光光度计可以计算出 Gd2-xLaxO3 薄膜的带隙为 5.78 eV。 X射线光电子能谱深度剖面分析表明，存在Gd-La-Si-O硅酸盐界面层，界面层富含La元素。对于物理厚度为 8 nm 的 Gd2-xLaxO3 (x = 1.29) 薄膜，在 800 摄氏度后退火后，在 V-g = V-fb + 1V 时，平带电压 (V-fb) 为 1.0 V，漏电流密度 (J(A)) 为 3A/cm(2)，获得了 1.08 nm 的等效氧化物厚度 (EOT)。 (C) 2012 Elsevier B.V. 保留所有权利。
Gd2-xLaxO3 high-k films were deposited on (100) Si substrates by low-pressure metal-organic chemical vapor deposition (MOCVD). The metal-organic precursors we used were Gd and La beta-diketonates. The structure, band gap, composition and electrical properties of Gd2-xLaxO3 films have been investigated. X-ray diffraction patterns show that as-deposited thick Gd2-xLaxO3 films on Si have formed cubic phase of solid solution with (222) preferred orientation. The band gap of the Gd2-xLaxO3 films can be calculated to be 5.78 eV using a UV-vis-NIR spectrophotometer. X-ray photoelectron spectroscopy depth profile analyses reveal that there exists an interfacial layer of Gd-La-Si-O silicate and the La element is rich in interfacial layer. The equivalent oxide thickness (EOT) of 1.08 nm has been obtained with the flatband voltage (V-fb) of 1.0 V and leakage current density (J(A)) of 3A/cm(2) at V-g = V-fb + 1V for Gd2-xLaxO3 (x = 1.29) films of 8 nm physical thickness after 800 degrees C post-annealing. (C) 2012 Elsevier B.V. All rights reserved.