Flexo-photovoltaic effect in MoS2
Flexo-photovoltaic effect in MoS2
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DOI：
10.1038/s41565-021-00919-y
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发表时间：
2021-06-17
影响因子：
38.3
通讯作者：
Shi, Jian
中科院分区：
文献类型：
--
作者：
Jiang, Jie;Chen, Zhizhong;Shi, Jian
通过相变引起的应变梯度方法，在MoS 2中观察到了弯曲光伏效应。非中心对称材料中特有的体光伏效应可能克服传统p-n结中光电转换的Shockley-Queisser理论极限。使用应变梯度工程，挠曲光伏效应，即应变梯度诱导的体光伏效应，可以在中心对称半导体中被激活，大大扩展了未来传感和能源应用的材料选择。在这里，我们报告了一个原型的二维材料，MoS 2的挠曲光伏效应的实验演示，通过使用应变梯度工程方法的基础上的结构不均匀性和相变的混合系统组成的MoS 2和VO 2。实验体光伏系数在二硫化钼是数量级高于大多数非中心对称材料。我们的研究结果揭示了低维材料中弯曲光伏效应与应变梯度之间的基本关系，这可能会激发应变梯度工程材料中新的光电现象的探索。
A strain-gradient approach induced by the phase-change transition enables the observation of the flexo-photovoltaic effect in MoS2.The theoretical Shockley-Queisser limit of photon-electricity conversion in a conventional p-n junction could be potentially overcome by the bulk photovoltaic effect that uniquely occurs in non-centrosymmetric materials. Using strain-gradient engineering, the flexo-photovoltaic effect, that is, the strain-gradient-induced bulk photovoltaic effect, can be activated in centrosymmetric semiconductors, considerably expanding material choices for future sensing and energy applications. Here we report an experimental demonstration of the flexo-photovoltaic effect in an archetypal two-dimensional material, MoS2, by using a strain-gradient engineering approach based on the structural inhomogeneity and phase transition of a hybrid system consisting of MoS2 and VO2. The experimental bulk photovoltaic coefficient in MoS2 is orders of magnitude higher than that in most non-centrosymmetric materials. Our findings unveil the fundamental relation between the flexo-photovoltaic effect and a strain gradient in low-dimensional materials, which could potentially inspire the exploration of new optoelectronic phenomena in strain-gradient-engineered materials.