Packaging Design of IGBT Power Module Using Novel Switching Cells
Packaging Design of IGBT Power Module Using Novel Switching Cells
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采用新型开关单元的 IGBT 功率模块封装设计
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Shengnan Li
中科院分区：
文献类型：
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作者：
Shengnan Li
功率模块中的寄生电感会在开关过程中产生电压尖峰和电流振铃，从而给电力电子器件带来额外的压力，增加电磁干扰（EMI），并降低功率转换器系统的性能。由于较新的功率器件具有更快的开关速度和更高的额定功率，功率模块的寄生电感的影响更加明显。本文提出了一种基于新型开关单元P-cell和N-cell概念的电力电子模块封装方法。它可以减少相脚模块中电流换流路径中的杂散电感，从而改善开关行为。
以绝缘栅双极晶体管（IGBT）为例，设计了两个相脚模块，即常规模块和基于P单元和N单元的模块。利用Ansoft Q3 D Extractor进行电磁仿真，提取两个模块的杂散电感。建立了ABB公司1200 V / 75 A IGBT模型和二极管模型进行仿真研究。电路寄生提取和建模。基于Saber仿真研究了不同封装寄生效应下的开关特性。
制作了两个原型相腿模块。使用精密阻抗分析仪测量寄生效应。测量结果与仿真结果吻合得很好。在实验室搭建了双脉冲测试仪。几种方法被用来减少电路和测量寄生。从这两个模块的开关特性，它被证实，较大的杂散电感的布局中导致较高的电压过冲关断期间，这反过来又增加了关断损耗。
设计了采用新型开关单元的多芯片（两个并联）IGBT模块。寄生效应被提取并与传统设计进行比较。在所提出的模块中，整体回路电感减小。然而，分支的错配较大。
Parasitic inductance in power modules generates voltage spikes and current ringing during switching which cause extra stress in power electronic devices, increase electromagnetic interference (EMI), and degrade the performance of the power converter system. As newer power devices have faster switching speeds and higher power ratings, the effect of the parasitic inductance of the power module is more pronounced. This dissertation proposes a novel packaging method for power electronics modules based on the concepts of novel switching cells: P-cell and N-cell. It can reduce the stray inductance in the current commutation path in a phase-leg module and hence improve the switching behavior.
Taking an insulated gate bipolar transistor (IGBT) as an example, two phase-leg modules, specifically a conventional module and a P-cell and N-cell based module were designed. Using Ansoft Q3D Extractor, electromagnetic simulation was carried out to extract the stray inductance from the two modules. An ABB 1200 V / 75 A IGBT model and a diode model were built for simulation study. Circuit parasitics were extracted and modeled. Switching behavior with different package parasitics was studied based on the Saber simulation.
Two prototype phase-leg modules were fabricated. The parasitics were measured using a precision impedance analyzer. The measurement results agree with the simulation very well. A double pulse tester was built in laboratory. Several approaches were used to reduce the circuit and measuring parasitics. From the switching characteristics of the two modules, it was verified that the larger stray inductance in the layout causes higher voltage overshoot during turn off, which in turn increases the turn off losses.
Multichip (two in parallel) IGBT modules applying novel switching cells was also designed. The parasitics were extracted and compared to a conventional design. The overall loop inductance was reduced in the proposed module. However, the mismatch of the paralleled branches was larger.