PLD-IBAD法YBCO超電導線材の開発自己配向成長したCeO2膜を利用したYBa2Cu3O7-x超電導線材の開発
PLD-IBAD法YBCO超電導線材の開発自己配向成長したCeO2膜を利用したYBa2Cu3O7-x超電導線材の開発
复制标题
PLD-IBAD法YBCO超导线材的开发利用自取向CeO2薄膜的YBa2Cu3O7-x超导线材的开发
DOI：
10.2320/jinstmet.68.718
复制
发表时间：
2004
影响因子：
--
通讯作者：
司 平山
中科院分区：
文献类型：
--
作者：
博幸 岩井;岳海 室賀;智則 渡部;成紀 宮田;顕 衣斐;穣 山田;融 塩原;丈晴 加藤;司 平山
为了制造具有高临界电流密度Jc的YBa 2Cu 3 O 7-x（YBCO）涂层导体，我们一直在研究在离子束辅助沉积（IBAD）上使用“自外延”PLD-CeO 2层的脉冲激光沉积（PLD）工艺-Gd 2 Zr 2 O 7（GZO）缓冲哈氏合金磁带。对于使用长度为10 mm、宽度为10 mm的短样品的研究，随着YBCO和CeO 2层的面内晶粒取向的降低，YBCO的Jc值呈指数增加，然后在Δ φ值为2.4 °时，Jc值达到4.4×1010 A/m2。此外，我们还成功地沉积了高Jc和厚YBCO薄膜，厚度为1.2 μm，Jc值为2.3×1010 A/m2。该值对应于276 A/cm-宽度。基于这些结果，0.9米至10米长的YBCO涂层导体制造使用卷到卷系统。在0.5 μm厚的0.9 m长样品中，Ic和Jc分别达到36.4 A和7.3×109 A/m2;在0.38 μm厚的4.5 m长样品中，Ic和Jc分别达到20.5 A和5.4×109 A/m2。
In order to fabricate a YBa2Cu3O7−x(YBCO) coated conductor with high critical current density, Jc, we have been investigating the pulsed laser deposition (PLD) processing using the “self-epitaxial ” PLD-CeO2 layer on an ion beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO) buffered Hastelloy tape. For the study using short samples with 10 mm in length and 10 mm in width, the Jc value of YBCO increased exponentially with decreasing the in-plane grain alignment of YBCO and CeO2 layers, and then the Jc value of 4.4×1010 A/m2 was attained at the delta phi value of 2.4 degrees. Furthermore, we also succeeded in deposition of high Jc and thick YBCO film; the thickness of 1.2 μm and the Jc value of 2.3×1010 A/m2. This value corresponds to 276 A/cm-width. Based on these results, 0.9 m to 10 m long YBCO coated conductors were fabricated using the reel-to-reel system. Consequently, Ic and Jc values attained 36.4 A and 7.3×109 A/m2 in the 0.9 m long sample with the thickness of 0.5 μm and 20.5 A and 5.4×109 A/m2 in the 4.5 m long sample with the thickness of 0.38 μm, respectively.