MAGNETORESISTANCE AND HALL EFFECT OF SODIUM-HYDRIDE-GRAPHITE TERNARY INTERCALATION COMPOUNDS

MAGNETORESISTANCE AND HALL EFFECT OF SODIUM-HYDRIDE-GRAPHITE TERNARY INTERCALATION COMPOUNDS
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氢化钠-石墨三元插层化合物的磁阻和霍尔效应

DOI:
10.1016/0925-8388(95)01762-3
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发表时间:
1995
影响因子:
6.2
通讯作者:
Kazuya Z. Suzuki
Kazuya Z. Suzuki
中科院分区:
材料科学2区
文献类型:
--
作者:
T. Enoki;Kazuto Matsutsuji;Kazuya Z. Suzuki

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通过磁阻和舒布尼科夫-德哈斯振荡研究了第5级氢化钠-石墨插层化合物的电子结构。石墨π电子载流子浓度低和层间载流子的缺乏,这与小费米能EF≈0.6eV有关,被认为是由NaH层间的强离子性引起的,与同结构氢化钾-石墨层间化合物的情况相反,该化合物在KH层间具有金属氢层,且石墨π载流子浓度高。
The electronic structure of stage 5 sodium hydride-graphite intercalation compounds is investigated by means of magnetoresistance and Shubnikov-de Haas oscillations. The small concentration of graphitic π electron carriers and the absence of intercalate carriers, which are related to the small Fermi energy EF≈ 0.6 eV, are considered to be brought about by the strong ionicity of the NaH intercalates, in contrast with the case of isostructural potassium hydride-graphite intercalation compounds which have metallic hydrogen layers in the KH intercalates with large concentration of graphitic π carriers.