Random and Ordered Macropore Formation in p-Type Silicon
Random and Ordered Macropore Formation in p-Type Silicon
复制标题
p 型硅中随机和有序大孔的形成
DOI：
10.1149/1.1424898
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发表时间：
2002
影响因子：
3.9
通讯作者：
U. Konig
中科院分区：
文献类型：
--
作者：
A. Vyatkin;V. Starkov;V. Tzeitlin;H. Presting;J. Konle;U. Konig
实验研究了p型硅中随机和有序大孔的形成。我们发现在随机大孔成核状态下，大孔的密度与样品掺杂浓度呈线性关系。大孔蚀刻速率线性依赖于电流密度直到临界电流密度值：当超过该值时，蚀刻速率发生饱和。在有序的大孔形成机制中发现了所谓的邻近效应，这种现象，以及在实验中观察到的大孔径和孔壁厚度的变化，可以用孔底当前局部化的简单模型来解释。在现有理论模型的基础上对实验数据进行了分析。通过分析得出结论，这些模型都不能描述现有的实验数据，包括本工作的数据。显然，需要新的实验数据来得出电化学大孔形成的通用模型。
Random and ordered macropore formation in p-type silicon have been studied experimentally. We found that the density of macropores in a random macropore nucleation regime is linearly depending on the samples doping concentration. Macropore etching rate depends linearly on the current density up to the critical current density value: a saturation in the etching rate takes place when this value is exceeded. The so-called proximity effect was discovered for the ordered macropore formation regime This phenomenon, and large pore diameters and pore wall thickness, and there variations have been observed in the experiments which can be accounted for in the frame of a simple model of the current localization at the pore bottom. An analysis of the experimental data based on the at present time existing theoretical models has been done. This analysis leads to the conclusion that none of these models can describe the existing experimental data including data of this work. It is clear that new experimental data are needed to come to a universal model of the electrochemical macropore formation.