Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology
Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology
复制标题
通过压印技术增强非晶硅固相结晶成核
DOI：
10.1063/1.126777
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发表时间：
2000
影响因子：
4
通讯作者：
T. Asano
中科院分区：
文献类型：
--
作者：
K. Makihira;T. Asano
本文提出了一种在非晶硅固相晶化过程中提高晶体成核率的方法。该方法使用镍涂层的硅尖的传统炉退火的非晶Si膜沉积在SiO2衬底上之前的印记。结晶的孵育时间被发现大大减少在与提示印记的网站。这种增强的成核作用可用于在受控位置形成直径达约7 μm的大晶粒。从压印与SiO2覆盖的硅尖得到的结果表明，增强成核的结果不是从压痕的物理效应，但从金属的化学效应从尖端转移到膜表面。
A method to enhance crystal nucleation at controlled sites in solid-phase crystallization of amorphous Si is demonstrated. The method uses imprint with Ni-coated Si tips prior to conventional furnace annealing of amorphous Si films deposited on SiO2 substrates. The incubation time for crystallization is found to be greatly reduced at sites imprinted with the tips. This enhanced nucleation can be used to form large crystal grains up to about 7 μm in diameter at controlled sites. Results obtained from imprint with SiO2-covered Si tips suggest that the enhanced nucleation results not from physical effects of indentation but from a chemical effect of metal transfered from the tip to the film surface.