A nanofabricated, monolithic, path-separated electron interferometer
A nanofabricated, monolithic, path-separated electron interferometer
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纳米制造的单片路径分离电子干涉仪
作者：
A. Agarwal;Chung;R. Hobbs;D. Dyck;K. Berggren
纳米制造技术的进步使许多电子光学元件得以发展，以增强图像对比度和操纵电子波函数。在这里，我们描述了一个模块化的，自对准，分幅电子干涉仪在传统的透射电子显微镜。该干涉仪由两层45 nm厚、相隔20 μm的硅层组成，该干涉仪是由单晶硅悬臂梁在透射式电子显微镜栅格上用聚焦离子束球磨制成的。利用该干涉仪，我们在一台未经修改的200 千伏透射电子显微镜上获得了马赫-曾德几何干涉条纹。条纹的周期为0.32 nm，对应于硅的[1̄1̄1]晶格面，最大对比度为15%。我们使用会聚束电子衍射来量化光栅的对准和相干性。这种设计有可能被放大到毫米级，并用于电子全息术。它还可以用于进行基本物理实验，例如与电子的无相互作用测量。
Progress in nanofabrication technology has enabled the development of numerous electron optic elements for enhancing image contrast and manipulating electron wave functions. Here, we describe a modular, self-aligned, amplitude-division electron interferometer in a conventional transmission electron microscope. The interferometer consists of two 45-nm-thick silicon layers separated by 20 μm. This interferometer is fabricated from a single-crystal silicon cantilever on a transmission electron microscope grid by gallium focused-ion-beam milling. Using this interferometer, we obtain interference fringes in a Mach-Zehnder geometry in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the [1̄1̄1] lattice planes of silicon, and a maximum contrast of 15%. We use convergent-beam electron diffraction to quantify grating alignment and coherence. This design can potentially be scaled to millimeter-scale, and used in electron holography. It could also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.