A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions
A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions
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相同条件下在(111)硅和(0001)蓝宝石衬底上生长的InGaN/GaN多量子阱的对比研究
DOI：
10.1088/1361-6463/ac8da4
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Zhu C
中科院分区：
文献类型：
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作者：
Zhu C
由于在硅衬底上发展iii -氮化物光电子器件的需求不断增加，有必要比较硅衬底上基于InGaN的发光二极管（led）和广泛使用的蓝宝石衬底上的iii -氮化物光电子器件的生长和光学性能。硅上氮化镓表现为拉伸应变，而蓝宝石上氮化镓表现为压缩应变。本文比较研究了在相同条件下生长在硅衬底和蓝宝石衬底上的InGaN/GaN多量子阱。研究发现，GaN应变状态对InGaN/GaN mqw的生长和光学性能有显著影响。光致发光测量表明，生长在硅衬底上的InGaN/GaN MQWs比生长在蓝宝石衬底上的InGaN/GaN MQWs具有更长的波长发射。详细的x射线衍射测量（包括互反空间映射测量）证实，与蓝宝石衬底相比，硅衬底上的InGaN mqw中的铟含量和生长速率都得到了提高，这是由于衬底上的GaN的拉伸应变。本文还研究了InGaN MQWs在两种不同基质上生长过程中的应变演化。基于原位曲率测量的定性研究表明，硅衬底上的应变变化对生长温度的变化要比蓝宝石衬底上的应变变化敏感得多。值得强调的是，这些结果为优化硅衬底上iii -氮化物光电子器件的生长条件提供了有用的指导。
Due to an increasing demand of developing III-nitride optoelectronics on silicon substrates, it is necessary to compare the growth and optical properties of III-nitride optoelectronics such as InGaN based light emitting diodes (LEDs) on silicon substrates and widely used sapphire substrates. GaN-on-silicon suffers from tensile strain, while GaN-on-sapphire exhibits compressive strain. This paper presents a comparative study of InGaN/GaN multiple quantum wells (MQWs) grown on a silicon substrate and a sapphire substrate under identical conditions. It has been found that GaN strain status has a significant influence on the growth and the optical properties of InGaN/GaN MQWs. Photoluminescence measurements indicate the InGaN/GaN MQWs grown on a silicon substrate exhibit significantly longer wavelength emission than those on a sapphire substrate. Detailed x-ray diffraction measurements including reciprocal space mapping measurements confirm that both indium content and growth rate in the InGaN MQWs on the silicon substrate are enhanced due to the tensile strain of the GaN underneath compared with those on the sapphire substrate. This work also presents an investigation on strain evolution during the InGaN MQWs growth on the two different kinds of substrates. A qualitative study based on in-situ curvature measurements indicates that a strain change on the silicon substrate is much more sensitive to a growth temperature change than that on the sapphire substrate. It is worth highlighting that the results provide useful guidance for optimising growth conditions for III-nitrides optoelectronics on silicon substrates.