Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films
Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films
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DOI：
10.1063/5.0011852
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发表时间：
2020-04
期刊：
影响因子：
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通讯作者：
F. Schreiber;L. Baldrati;C. Schmitt;R. Ramos;E. Saitoh;R. Lebrun;M. Kläui
中科院分区：
文献类型：
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作者：
F. Schreiber;L. Baldrati;C. Schmitt;R. Ramos;E. Saitoh;R. Lebrun;M. Kläui
我们通过在改编的克尔显微镜中进行并发传输和磁光成像测量，证明了 NiO/Pt 中大面积 ($> 100\;\mu m^2$) 反铁磁域的稳定且可逆的电流感应切换。通过将这些电流感应切换实验中的反铁磁畴变化的磁图像与磁传输信号响应相关联，我们解开了磁性和非磁性对传输信号的贡献。我们的桌面方法建立了一种强大的程序来减去传输信号中的非磁性贡献，并提取与反铁磁域切换相关的自旋霍尔磁阻响应，使人们能够从简单的传输测量中推断出反铁磁切换的细节。
We demonstrate stable and reversible current induced switching of large-area ($> 100\;\mu m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.