An electrically pumped surface-emitting semiconductor green laser
An electrically pumped surface-emitting semiconductor green laser
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DOI：
10.1126/sciadv.aav7523
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发表时间：
2020-01-01
期刊：
影响因子：
13.6
通讯作者：
Mi, Zetian
中科院分区：
文献类型：
--
作者：
Ra, Yong-Ho;Rashid, Roksana Tonny;Mi, Zetian
表面发射半导体激光器已广泛应用于数据通信，传感，以及最近的面部识别和增强现实眼镜。在这里，我们报告了利用无位错氮化镓纳米晶体阵列中形成的光子带边缘模式，而不是使用传统的DBR，实现了全外延、无分布式Bragg反射器（DBR）的电注入表面发射绿色激光器的第一个成就。该器件的工作波长接近523 nm，阈值电流接近400 a /cm(2)，比之前报道的蓝色激光二极管低一个数量级以上。我们的研究为开发从紫外到深可见光（类似于200至600 nm）的低阈值表面发射激光二极管开辟了新的范例，其中器件性能不再受到缺乏高质量dbr，大晶格失配和衬底可用性的限制。
Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)-free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at similar to 523 nm and exhibits a threshold current of similar to 400 A/cm(2), which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (similar to 200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.