Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates
Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates
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GaAs (100) 衬底上生长的 p 型 ZnSe 薄膜的氢化和退火效应
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
T. W. Kim
中科院分区：
文献类型：
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作者：
Myung;Hyung;T. W. Kim
用光致发光(PL)和拉曼散射研究了分子束外延生长在n型GaAs(100)衬底上的p型ZnSe外延层的氢化和退火效应。氢化后的光致发光光谱表明，深受主束缚激子峰消失，施主-受主对峰的峰位向高能方向移动。氢化锌硒/砷化镓异质结在30 0 °下退火时，由于中性受主而产生束缚激子。氢化后等离子体纵向光声子耦合模拉曼强度增大。这些结果表明，氢化处理提高了在n型GaAs衬底上生长的p型ZnSe外延层的结晶度，氢化和退火化处理的ZnSe薄膜有望作为缓冲层用于生长Zn1−xMgxSySe1−y有源层。
Photoluminescence (PL) and Raman scattering measurements have been carried out to investigate the hydrogenation and annealing effects in p-type ZnSe epilayers grown on n-type GaAs (100) substrates by molecular beam epitaxy. After hydrogenation, the PL spectra showed that the deep acceptor-bound exciton peak disappeared and that the peak position of the donor–acceptor pair peak shifted to a higher energy. When the hydrogenated ZnSe/GaAs heterostructure was annealed at 300 °, a bound exciton due to neutral acceptors appeared. The Raman intensity of the plasma longitudinal optical-phonon-coupling mode increased after hydrogenation. These results indicate that the crystallinity of the p-type ZnSe epilayers grown on n-type GaAs substrates is improved by hydrogenation and that hydrogenated and annealed ZnSe films grown on GaAs substrates hold promise for potential application as buffer layers for the growth of Zn1−xMgxSySe1−y active layers.