The future of ZnO light emitters
The future of ZnO light emitters
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DOI：
10.1002/pssa.200404803
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发表时间：
2004-08-01
影响因子：
2
通讯作者：
Park, SJ
中科院分区：
文献类型：
--
作者：
Look, DC;Claflin, B;Park, SJ
紧凑型固态紫外光发射器有许多潜在的应用，而氧化锌基材料是波长范围为390 nm及更低的理想选择。然而，最有效的固态发射体是p-n结，p型氧化锌很难制造。因此，氧化锌发光体的未来要么取决于生产低阻的p型氧化锌，要么取决于n型氧化锌与p型空穴注入器的匹配。也许到目前为止最好的器件包括n-ZnO/p-AlGaN/n-SiC结构，它在300K和500K下都能产生强烈的390+/-1 nm发射。然而，p-ZnO的开发正在快速进行，p-n同质结应该很快就会出现。
Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters are p-n junctions, and p-type ZnO is difficult to make. Thus, the future of ZnO light emitters depends on either producing low-resistivity p-type ZnO, or in mating n-type ZnO with a p-type hole injector. Perhaps the best device so far involves an n-ZnO/p-AlGaN/n-SiC structure, which produces intense 390 +/- 1 nm emission at both 300 K and 500 K. However, development of p-ZnO is proceeding at a rapid pace, and a p-n homojunction should be available soon.