Stoichiometry Study of S-Terminated GaAs(001)-(2*6) Surface with Synchrotron Radiation Photoelectron Spectroscopy.
Stoichiometry Study of S-Terminated GaAs(001)-(2*6) Surface with Synchrotron Radiation Photoelectron Spectroscopy.
复制标题
使用同步辐射光电子能谱对 S 端接的 GaAs(001)-(2*6) 表面进行化学计量研究。
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Y. Watanabe
中科院分区：
文献类型：
--
作者：
M. Shimoda;S. Tsukamoto;T. Ohno;N. Koguchi;M. Sugiyama;S. Maeyama;Y. Watanabe
利用同步辐射光电子能谱（SRPES）研究了S端GaAs（001）-（2 ×6）的表面化学计量比，特别是确定了（2 ×6）重构单元结构中由缺失的二聚体分离的五种二聚体的化学物种.随着衬底温度的升高，S 2 p光电子谱的峰强度显著降低，而As 3d光电子谱没有明显变化。Ga 3d光电子谱被分解为体成分和一个以上的表面成分，其中一个成分是Ga S键，并随着S 2 p光电子谱的变化而降低。这些结果有力地支持了（2 ×6）重建中的5个二聚体中的每一对都由S-S二聚体组成的模型。
Synchrotron radiation photoelectron spectroscopy (SRPES) has been performed to investigate the surface stoichiometry of the S-terminated GaAs(001)-(2 ×6), and in particular, to determine the chemical species of the five dimers, which are separated by missing dimers and form the unit structure of the (2 ×6) reconstruction. The S 2p photoemission spectra show a significant decrease in the peak intensity with increasing substrate temperature, whereas no significant changes are observed for the As 3d photoemission spectra The Ga 3d spectra are decomposed into a bulk component and more than one surface component, one of which is attributed to a Ga–S bond and decreases in accordance with the change observed in the S 2p spectra. These results strongly support the model that each pair of the five dimers in the (2 ×6) reconstruction consists of S–S dimers.