Efficiency analysis of a high frequency PS-ZVS isolated unidirectional full-bridge DC-DC converter based on SiC MOSFETs
Efficiency analysis of a high frequency PS-ZVS isolated unidirectional full-bridge DC-DC converter based on SiC MOSFETs
复制标题
基于 SiC MOSFET 的高频 PS-ZVS 隔离式单向全桥 DC-DC 转换器的效率分析
DOI：
10.1109/epe.2016.7695601
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Dieckerhoff
中科院分区：
文献类型：
--
作者：
A. Awwad;Nasser Badawi;S. Dieckerhoff
在这项工作中，一种新的双沟槽SiC MOSFET的静态和动态特性进行了实验研究，并比较了两个不同的商业SiC MOSFET。将SiC器件应用于ZVZCS移相全桥变换器中，利用Transformer的寄生漏感实现软开关。提出了一种实用的方法来打破转换器损耗的基础上分离测量的半导体和磁损耗，并比较分析损耗模型。实验结果表明，在变换器中使用SiC MOSFET以及ZVZCS的一些优点。其主要结果是消除了续流环流模式，箝位了整流二极管上的过冲电压，实现了宽功率负载范围内的软开关，无需附加辅助电路或谐振电感。10 kW，（100-250）kHz原型的实验结果表明，整个转换器的效率高达98.1%。
In this work, the static and dynamic characteristics of a new double-trench SiC MOSFET are experimentally investigated and compared to two different available commercial SiC MOSFETs. The SiC devices are applied in a ZVZCS Phase-Shifted Full-Bridge converter which uses the parasitic leakage inductance of the transformer to achieve soft switching. A practical method to break down the converter losses based on separating the measured semiconductor and magnetic losses is proposed and compared to an analytical loss model. The experimental results show several advantages of using SiC MOSFETs as well as ZVZCS in the converter. The main results can be summarized as elimination of the freewheeling circulating current mode, clamping the overshoot voltage across the rectifier diodes and achieving soft switching in a wide power load range without additional auxiliary circuits or resonant inductor. Experimental results for a 10kW, (100-250) kHz prototype show an efficiency of up to 98,1% for the whole converter.