Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics
Noise-Induced Resistance Broadening in Resistive Switching Memory-Part II: Array Statistics
复制标题
DOI：
10.1109/ted.2015.2477135
复制
发表时间：
2015-11-01
影响因子：
3.1
通讯作者：
Ielmini, Daniele
中科院分区：
文献类型：
--
作者：
Ambrogio, Stefano;Balatti, Simone;Ielmini, Daniele
电阻式开关存储器（RRAM）中的噪声是主要关注的问题之一，因为它对单比特和多电平单元器件的可靠性有影响。尽管对典型RRAM单元中的噪声有相当好的理解，但是噪声的统计以及电流波动中统计尾部的存在和影响是在阵列级上主要影响RRAM可靠性的因素。本文讨论了RRAM阵列中的电流噪声，重点是高阻态分布及其随时间的展宽。我们强调了两个主要的贡献的尾巴的行为，即随机游走（RW）和随机电报噪声（RTN）与随机开始和停止。我们提供的证据RW振幅随时间的时间衰减，我们解释的时间依赖性稳定的缺陷。最后，我们开发了一个统计蒙特卡罗模型的噪声，这是能够解释的RW和RTN组件的物理描述的基础上的电阻分布的扩大。
Noise in resistive switching memory (RRAM) is among the main concerns due to its impact on the reliability of single-bit and multilevel cell devices. Although noise in typical RRAM cells is understood fairly well, the statistics of noise and the presence and impact of statistical tails in the current fluctuation is what mostly affects the RRAM reliability at the array level. This paper addresses current noise in RRAM arrays, focusing on high-resistance state distribution and its broadening with time. We highlight two main contributions to the tail behavior, namely, random walk (RW) and random telegraph noise (RTN) with random start and stop. We provide evidence for a time decay of RW amplitude with time, which we explain by time-dependent stabilization of defects. We finally develop a statistical Monte Carlo model for noise, which is capable of explaining the broadening of the resistance distribution based on a physical description of RW and RTN components.