Application of V-groove technology to InP solar cells

Application of V-groove technology to InP solar cells
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V型槽技术在InP太阳能电池中的应用

DOI：
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发表时间：
1990
期刊：
International Conference on Indium Phosphide and Related Materials
影响因子：
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通讯作者：
M. Faur
M. Faur
中科院分区：
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文献类型：
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作者：
S. Bailey;N. Fatemi;G. Landis;D. Brinker;M. Faur

文献摘要

被引文献

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制备并测试了具有V形槽前表面的InP太阳能电池。该电池是由封闭式热扩散的硫到Zn掺杂的InP衬底上的凹槽形成的湿化学各向异性蚀刻。反射率的测量结果表明，显着较低的反射率的微槽电池相比，平面晶片。测量了电池短路电流、开路电压、效率和量子效率随波长的变化。与平面电池相比，V形槽电池在整个光谱范围内显示出增加的短路电流，电压略有下降。&lt;<ETX>&gt;
InP solar cells with a V-grooved front surface were fabricated and tested. The cells were made by the closed-ampoule thermal diffusion of sulfur into Zn-doped InP substrates on which the grooves were formed by a wet-chemical anisotropic etch. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to a planar wafer. Cell short-circuit current, open-circuit voltage, efficiency, and quantum efficiency as a function of wavelength were measured. Compared to planar cells, the V-grooved cells showed increased short circuit current over the entire spectral range, with a slight decrease in voltage.<<ETX>>