Charge carrier induced lattice strain and stress effects on As activation in Si
Charge carrier induced lattice strain and stress effects on As activation in Si
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DOI：
10.1063/1.2956401
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发表时间：
2008-07-14
影响因子：
4
通讯作者：
Dunham, Scott T.
中科院分区：
文献类型：
--
作者：
Ahn, Chihak;Dunham, Scott T.
我们用密度泛函理论研究了As的晶格膨胀系数，特别注意了电子和离子的碰撞分离。根据As在平衡条件下的失活机理，预测了应力对As活化的影响。我们发现，双轴应力对As的激活影响很小，这与Sugii的实验观察一致[J.Appl。太棒了。96,261(2004)]和班尼特[J.SCI。泰克诺。B 26,391(2008)]。(C)2008年美国物理研究所。
We studied lattice expansion coefficient due to As using density functional theory with particular attention to separating the impact of electrons and ions. Based on As deactivation mechanism under equilibrium conditions, the effect of stress on As activation is predicted. We find that biaxial stress results in minimal impact on As activation, which is consistent with experimental observations by Sugii [J. Appl. Phys. 96, 261 (2004)] and Bennett [J. Vac. Sci. Technol. B 26, 391 (2008)]. (C) 2008 American Institute of Physics.