Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films
Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films
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DOI：
10.1063/1.3006325
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发表时间：
2008-10
影响因子：
4
通讯作者：
S. Jang;D. Lee;J. Lee;T. Noh;Y. Jo;M. Jung;J.-S. Chung
中科院分区：
文献类型：
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作者：
S. Jang;D. Lee;J. Lee;T. Noh;Y. Jo;M. Jung;J.-S. Chung
在Pt（111）/Al_2O_3（0001）和氧化钇稳定的氧化锆（111）衬底上制备的六方晶系ErMnO_3外延薄膜在低温下表现出铁电特性和磁有序性。随着温度的降低，ErMnO 3薄膜首先表现出反铁磁性。在较低的温度下，在较低的氧分压下沉积的薄膜表现出自旋玻璃行为。在Pt（111）/Al_2O_3（0001）和氧化钇稳定的ZrO_2（111）衬底上制备了六方晶系ErMnO_3外延薄膜。衬底表现出铁电特性和磁有序在低温下。随着温度的降低，ErMnO 3薄膜首先表现出反铁磁性。在较低的温度下，在较低的氧分压下沉积的薄膜表现出自旋玻璃行为。这种重入自旋玻璃行为归因于在六方几何结构中的反铁磁相互作用和由来自氧空位的过量电子引起的Mn价态变化引起的铁磁相互作用之间的竞争。
Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and yttria-stabilized zirconia(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and yttria-stabilized zirconia(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.