Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes
Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes
复制标题
谐振隧道二极管负微分电阻区的电容异常
DOI：
10.1143/jjap.36.l330
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发表时间：
1997
影响因子：
1.5
通讯作者：
Tadao Ishibashi Tadao Ishibashi
中科院分区：
文献类型：
--
作者：
N. Shimizu;Takao Waho Takao Waho;Tadao Ishibashi Tadao Ishibashi
研究了In0.53Ga0.47As/AlAs共振隧穿二极管在负微分电阻（NDR）区电容-电压（C-V）特性的峰值结构。我们的实验结果表明，负责的电容峰值的电子面密度是等于在量子阱中的峰值电压的一半。对于2.0 nm和2.3 nm AlAs势垒，量子阱中峰值电流处的电子面密度为3.2×1011 cm-2，量子阱中的电子寿命为320和580 fs。
For In0.53Ga0.47As/AlAs resonant tunneling diodes, the peak structure in the capacitance-voltage ( C-V) characteristics in the negative differential resistance (NDR) region was investigated. We experimentally reveal that the electron sheet density that is responsible for the capacitance peak is equal to half of that in the quantum well at the peak voltage. The derived electron sheet density in the quantum well at the peak current is 3.2×1011 cm-2 and the resulting electron lifetimes in the quantum well are 320 and 580 fs for 2.0- and 2.3-nm AlAs barriers.