Low-threshold-current operation of 1540 nm GaInAsP∕InP distributed-feedback lasers with multiple-quantum-wire active regions
Low-threshold-current operation of 1540 nm GaInAsP∕InP distributed-feedback lasers with multiple-quantum-wire active regions
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DOI：
10.1063/1.2138789
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发表时间：
2005-11
影响因子：
4
通讯作者：
H. Yagi;K. Miura;Y. Nishimoto;D. Plumwongrot;K. Ohira;T. Maruyama;S. Arai
中科院分区：
文献类型：
--
作者：
H. Yagi;K. Miura;Y. Nishimoto;D. Plumwongrot;K. Ohira;T. Maruyama;S. Arai
采用电子束光刻、CH 4 scinH 2反应离子刻蚀和两步有机金属气相外延生长工艺，实现了由线宽为24 nm的多量子线有源区组成的1540 nm波长GaInAsP scinInP分布反馈激光器。在室温连续波条件下，当条宽为3.0μm，腔长为330μm时，阈值电流为2.7mA（阈值电流密度为270 A scincm ~ 2），微分量子效率为19% scinfacet，子模抑制比为51 dB。
1540 nm wavelength GaInAsP∕InP distributed-feedback lasers consisting of multiple-quantum-wire active regions with the wire width of 24 nm were realized by electron-beam lithography, CH4∕H2 reactive ion etching, and two-step organometallic vapor-phase-epitaxial growth processes. A threshold current as low as 2.7 mA (threshold current density=270A∕cm2), a differential quantum efficiency of 19%∕facet and a submode suppression ratio of 51 dB at a bias current of twice the threshold were achieved for the stripe width of 3.0μm and the cavity length of 330μm under a room-temperature continuous-wave condition.