Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayers
Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayers
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DOI：
10.1016/j.jcrysgro.2011.11.036
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发表时间：
2012-08
影响因子：
1.8
通讯作者：
H. Fujii;Yunpeng Wang;Kentaroh Watanabe;M. Sugiyama;Y. Nakano
中科院分区：
文献类型：
--
作者：
H. Fujii;Yunpeng Wang;Kentaroh Watanabe;M. Sugiyama;Y. Nakano
