Massively parallel dip-pen nanolithography with 55000-pen two-dimensional arrays
Massively parallel dip-pen nanolithography with 55000-pen two-dimensional arrays
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DOI：
10.1002/anie.200603142
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发表时间：
2006-01-01
影响因子：
16.6
通讯作者：
Mirkin, Chad A.
中科院分区：
文献类型：
--
作者：
Salaita, Khalid;Wang, Yuhuang;Mirkin, Chad A.
使用MEMS技术，[13]我们已经制造了55000笔2D阵列（产率> 98%;图1A）。在x和y方向上的笔间距分别为90和20 μm，该阵列占据1 cm 2，并且具有迄今为止报道的最高密度和最大的总数量。[2]55000笔阵列的开发，使它将服从于光刻方法，不需要从每个tip. Large面积DPN是可能的，因为与阵列架构和一个新颖的，但很容易采用的重力驱动的对准程序（图1B）的几个功能与此2D阵列的独立反馈。首先，制造悬臂梁，使得每个金字塔尖端的顶点比悬臂梁基部高（7.6 μm至0.2 μm），并且每个尖端具有边长与悬臂梁宽度相当的正方形基部（图1A）。该笔结构给予尖端足够的空间间隙以接近基板。第二，通过用25 nm的Au（和5 nm的Ti粘附层）涂覆杠杆，然后在300 ℃下退火2小时，使杠杆从支撑基底弯曲约20 °角（或约20 μm的尖端偏转）。[13]这种弯曲是金和氮化硅的不同热膨胀以及由退火诱导的Au/Ti/SixNy多层结构的重构引起的内应力的结果。[14[15]弯曲
Using photolithographic techniques,[13] we have fabricated a 55000-pen 2D array (yield> 98%; Figure 1A). With a pen spacing of 90 and 20 μm in the x and y directions, respectively, this array occupies 1 cm2 and has the highest density and largest total number of cantilevers reported to date.[2] The 55000-pen array was developed so that it would be amenable to a lithographic approach that does not require independent feedback from each tip.Large-area DPN is possible with this 2D array because of several features associated with the array architecture and a novel but easily adoptable gravity-driven alignment procedure (Figure 1B). First, the cantilevers were fabricated such that the apex of each pyramidal tip is (7.6 Æ 0.2) μm taller than the cantilever base, and each tip has a square base with an edge length comparable to the cantilever width (Figure 1A). This pen structure gives the tip adequate spatial clearance for approaching the substrate. Second, the cantilevers are bent at an angle of approximately 208 (or a tip deflection of approximately 20 μm) from the supporting base by coating them with 25 nm of Au (and a 5-nm Ti adhesion layer) and then annealing at 3008C for 2 h.[13] This curvature is a result of the different thermal expansion of gold and silicon nitride, and intrinsic stress arising from the annealing-induced restructuring of the Au/Ti/SixNy multilayer.[14, 15] The bent