High-speed THz semiconductor imaging camera
High-speed THz semiconductor imaging camera
复制标题
高速太赫兹半导体成像相机
DOI：
10.1109/irmmw-thz.2013.6665502
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
I. Kukushkin
中科院分区：
文献类型：
--
作者：
V. Muravev;G. Tsydynzhapov;A. Fortunatov;I. Kukushkin
研制了一套高速室温太赫兹成像系统。该传感器由等离子体激元半导体探测器阵列（64×64）组成。探测器在10 GHz - 1 THz的频率范围内具有高达20 V/W的宽带响应度。传感器参数的像素间偏差不大于20%。具有放大电路的传感器提供100 ms的发射时间。传感器使用标准半导体制造周期制造。因此，该装置是低成本大规模生产的理想对象。
A high-speed room temperature THz imaging system is developed. The sensor consists of an array (64×64) of plasmonic semiconductor detectors. The detectors have broadband responsivity of up to 20 V/W in the frequency range 10 GHz - 1 THz. Pixel-to-pixel deviation of the sensor parameters is not larger than 20%. The sensor with an amplification electrical circuit provide shot times of 100 ms. The sensor is fabricated using standard semiconductor fab cycles. Therefore, the device is an ideal object for low-cost mass production.