Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
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DOI:
10.1063/1.4895930
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发表时间:
2014-09-15
影响因子:
4
通讯作者:
Veal, T. D.
中科院分区:
文献类型:
--
作者:
Kopaczek, J.;Rajpalke, M. K.;Veal, T. D.
Molecular beam epitaxy is used to grow Ga1-yInySb1-xBix (y