A tribochemical study of ceria-silica interactions for CMP
A tribochemical study of ceria-silica interactions for CMP
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DOI：
10.1149/1.2349357
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发表时间：
2006-01-01
影响因子：
3.9
通讯作者：
Singha, Rajiv K.
中科院分区：
文献类型：
--
作者：
Abiade, Jeremiah T.;Yeruva, Suresh;Singha, Rajiv K.
浅沟槽隔离（STI）允许更紧密的器件封装和减少的芯片隔离面积。STI严重依赖于只有使用化学机械抛光（CMP）才可能实现的全局平面性。基于氧化铈的浆料被认为是STI CMP最有前途的候选材料。尽管在玻璃抛光中使用了几十年，但氧化铈浆料的独特特性尚未得到很好的理解。在这项研究中，我们进行了力测量和摩擦学测试，使用原子力显微镜（AFM）和扫描电子显微镜，以调查pH值依赖的氧化铈-二氧化硅和二氧化硅-二氧化硅的相互作用，在CMP过程中发生。我们的研究证实了在二氧化硅-二氧化硅磨损期间在高pH下水解的影响。一个额外的物理化学的贡献，氧化铈-二氧化硅抛光确定和讨论。此外，一个很强的相关性之间观察到基于AFM的研究和原位摩擦力测量CMP过程中。(c)2006年电化学学会。
Shallow trench isolation (STI) allows tighter device packing and reduced chip area for isolation. STI is critically dependent on the global planarity that is only possible using chemical mechanical polishing (CMP). Ceria-based slurries are considered the most promising candidates for STI CMP. Despite decades of use in glass polishing, the unique characteristics of ceria slurries are not well understood. In this study, we have conducted force measurements and tribological tests using an atomic force microscope (AFM) and a scanning electron microscope to investigate pH-dependent ceria-silica and silica-silica interactions that occur during CMP. Our studies confirm the effect of hydrolysis at high pH during silica-silica abrasion. An additional physicochemical contribution to ceria-silica polishing is identified and discussed. Furthermore, a strong correlation was observed between the AFM based studies and in situ friction force measurements during CMP. (c) 2006 The Electrochemical Society.