Structural multi-colour invisible inks with submicron 4D printing of shape memory polymers.
Structural multi-colour invisible inks with submicron 4D printing of shape memory polymers.
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采用亚微米 4D 打印形状记忆聚合物的结构多色隐形墨水
DOI：
10.1038/s41467-020-20300-2
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发表时间：
2021-01-04
影响因子：
16.6
通讯作者：
Yang JKW
中科院分区：
文献类型：
--
作者：
Zhang W;Wang H;Wang H;Chan JYE;Liu H;Zhang B;Zhang YF;Agarwal K;Yang X;Ranganath AS;Low HY;Ge Q;Yang JKW
形状记忆聚合物(SMP)的四维(4D)打印赋予3D结构时间响应特性。在这里，我们探索了亚微米长度的SMP的4D打印，将其应用扩展到纳米声学。我们报道了一种基于VERO CLEAR的新型SMP光刻胶，利用双光子聚合光刻技术实现了分辨率约为30 0 nm半间距的印刷特征。由尺寸可调的多色网格组成的印刷品使形状记忆效应的研究能够通过纳米级结构变形实现大的视觉位移。随着纳米结构的扁平，颜色和打印的信息变得看不见。值得注意的是，形状记忆效应在加热到玻璃化转变温度以上的几秒钟内恢复了纳米结构的原始表面形态和结构颜色。高分辨率打印以及在微观形貌和光学特性方面的出色可逆性为温度敏感标签、用于防伪的信息隐藏和可调光子器件提供了一个平台。形状记忆聚合物(SMP)的四维(4D)打印赋予3D结构时间响应特性。在这里，作者探索了亚微米长度的SMP的4D打印，将其应用扩展到纳米声学。
Four-dimensional (4D) printing of shape memory polymer (SMP) imparts time responsive properties to 3D structures. Here, we explore 4D printing of a SMP in the submicron length scale, extending its applications to nanophononics. We report a new SMP photoresist based on Vero Clear achieving print features at a resolution of ~300 nm half pitch using two-photon polymerization lithography (TPL). Prints consisting of grids with size-tunable multi-colours enabled the study of shape memory effects to achieve large visual shifts through nanoscale structure deformation. As the nanostructures are flattened, the colours and printed information become invisible. Remarkably, the shape memory effect recovers the original surface morphology of the nanostructures along with its structural colour within seconds of heating above its glass transition temperature. The high-resolution printing and excellent reversibility in both microtopography and optical properties promises a platform for temperature-sensitive labels, information hiding for anti-counterfeiting, and tunable photonic devices. Four-dimensional (4D) printing of shape memory polymer (SMP) imparts time responsive properties to 3D structures. Here, the authors explore 4D printing of a SMP in the submicron length scale, extending its applications to nanophononics.
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影响因子：
4.6
作者：
Ge Q;Sakhaei AH;Lee H;Dunn CK;Fang NX;Dunn ML
通讯作者：
Dunn ML
影响因子：
9
作者：
Cetin, Arif E.;Mertiri, Alket;Altug, Hatice
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Altug, Hatice
影响因子：
4
作者：
Chakravartula, A;Komvopoulos, K
通讯作者：
Komvopoulos, K
影响因子：
10.8
作者：
Jang, Ji-Hyun;Koh, Cheong Yang;Thomas, Edwin L.
通讯作者：
Thomas, Edwin L.
影响因子：
9.5
作者：
Kuang, Xiao;Chen, Kaijuan;Qi, H. Jerry
通讯作者：
Qi, H. Jerry