Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology
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CMOS-JFET-双极抗辐射模拟-数字 SOI 技术的工业转移和稳定

DOI：
10.1109/nssmic.1998.774298
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发表时间：
1998
期刊：
1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)
影响因子：
--
通讯作者：
K. Rodde
K. Rodde
中科院分区：
--
文献类型：
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作者：
M. Dentan;P. Abbon;P. Borgeaud;E. Delagnes;N. Fourches;D. Lachartre;F. Lugiez;B. Paul;M. Rouger;R. Truche;J. Blanc;O. Faynot;C. Leroux;E. Delevoye;J. Pelloie;J. de Pontcharra;O. Flament;J. Guebhard;J. Leray;J. Montaron;O. Musseau;A. Vitez;C. Le Mouellic;T. Corbiere;A. Dantec;G. Festes;J. Martinez;K. Rodde

文献摘要

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DMILL技术在SOI衬底上集成了混合模拟-数字甚硬(&gt；10 mrad和&gt；10/sup 14/中子/厘米/sup 2/)垂直双极型、0.8/spl mU/m cmos和1.2/spl mU/m PJFET晶体管。本文在介绍了DMILL项目目标后，详细讨论了MHS铸造厂的主要技术选择、从研发到工业实施的主要里程碑，以及最终工艺流程稳定后所取得的主要成果。
DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS and 1.2 /spl mu/m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss more into details the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry.