24 m/spl Omega/cm/sup 2/ 680 V silicon superjunction MOSFET

24 m/spl Omega/cm/sup 2/ 680 V silicon superjunction MOSFET
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DOI：
10.1109/ispsd.2002.1016216
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发表时间：
2002-08
期刊：
Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
影响因子：
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通讯作者：
Y. Onishi;S. Iwamoto;T. Sato;T. Nagaoka;K. Ueno;T. Fujihira
Y. Onishi;S. Iwamoto;T. Sato;T. Nagaoka;K. Ueno;T. Fujihira
中科院分区：
其他
文献类型：
--
作者：
Y. Onishi;S. Iwamoto;T. Sato;T. Nagaoka;K. Ueno;T. Fujihira

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报道了一种具有极低比导通电阻R/sub on/A和极低比导通电阻R/sub on/Q/sub gd/（Q/sub gd/为栅漏开关电荷）的硅超结MOSFET。在击穿电压为680 V时，R/sub on/A和R/sub on/Q/sub gd/分别为24 m/spl Omega/cm/sup 2/和2.0 /spl Omega/nC，这是击穿电压高于500 V的高压硅功率MOSFET中最低的。文中还对埋层外延超结技术的设计进行了数值分析和讨论。
A silicon superjunction MOSFET with very low specific on-resistance, R/sub on/A, and very low R/sub on/Q/sub gd/, where Q/sub gd/ is the gate-to-drain switching charge, is reported. R/sub on/A and R/sub on/Q/sub gd/ achieved are 24 m/spl Omega/cm/sup 2/ and 2.0 /spl Omega/nC at the breakdown voltage of 680 V, which are the lowest among the reported values for high-voltage silicon power MOSFETs with breakdown voltage above 500 V. Numerical analysis and discussions on the design of the buried epitaxial superjunction technology are also presented.