Polarization-induced transport in ferroelectric organic field-effect transistors
Polarization-induced transport in ferroelectric organic field-effect transistors
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DOI：
10.1063/1.4914415
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发表时间：
2015-03
影响因子：
3.2
通讯作者：
A. Laudari;S. Guha
中科院分区：
文献类型：
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作者：
A. Laudari;S. Guha
铁电介质，允许接近一个数量级范围的介电常数与温度作为调谐参数，提供了一个很好的平台来监测界面输运的变化在有机场效应晶体管（ofet）极化强度调谐。利用铁电共聚物聚偏氟乙烯-共三氟乙烯（PVDF-TrFE）作为栅极绝缘层，对五苯基ofet进行了温度相关输运研究。栅极电介质的厚度从20 nm到500 nm不等。通过拟合载流子迁移率随温度的arrhenius型依赖关系，发现随着PVDF-TrFE层厚度的减小，铁电相的活化能增加。PVDF-TrFE铁电相中载流子迁移率的弱温度依赖性可能归因于极化波动驱动的输运，这种输运是由电荷之间的耦合引起的。
Ferroelectric dielectrics, permitting access to nearly an order of magnitude range of dielectric constants with temperature as the tuning parameter, offer a great platform to monitor the changes in interfacial transport in organic field-effect transistors (OFETs) as the polarization strength is tuned. Temperature-dependent transport studies have been carried out from pentacene-based OFETs using the ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as a gate insulating layer. The thickness of the gate dielectric was varied from 20 nm to 500 nm. By fits to an Arrhenius-type dependence of the charge carrier mobility as a function of temperature, the activation energy in the ferroelectric phase is found to increase as the thickness of the PVDF-TrFE layer decreases. The weak temperature-dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE may be attributed to a polarization fluctuation driven transport, which results from a coupling of the charge ca...