Carrier collection characteristics of microcrystalline silicon-germanium p-i-n junction solar cells
Carrier collection characteristics of microcrystalline silicon-germanium p-i-n junction solar cells
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DOI：
10.1016/j.jnoncrysol.2007.09.026
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发表时间：
2008-05-01
影响因子：
3.5
通讯作者：
Kondo, M.
中科院分区：
文献类型：
--
作者：
Matsui, T.;Ogata, K.;Kondo, M.
我们报告的载子收集特性的氢化微晶硅锗（μ c-Si 1-xGex：H）p-i-n结太阳能电池制造的低温（类似于200摄氏度）等离子体增强化学气相沉积。光谱响应测量表明，Ge掺入到吸收体i层降低了短波长处的量子效率。此外，x >= 0.35的太阳能电池的照明度，特别是在波长范围内
We report on the carrier collection characteristics of hydrogenated microcrystalline silicon-germanium (mu c-Si1-xGex:H) p-i-n junction solar cells fabricated by low-temperature (similar to 200 degrees C) plasma-enhanced chemical vapor deposition. Spectral response measurements reveal that the Ge incorporation into absorber i-layer reduces the quantum efficiencies at short wavelengths. Furthermore, the illumination of the solar cells for x >= 0.35, particularly in the wavelength range of