Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature
Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature
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DOI：
10.1063/1.4867260
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发表时间：
2014-03
影响因子：
4
通讯作者：
A. Tsurumaki‐Fukuchi;H. Yamada;A. Sawa
中科院分区：
文献类型：
--
作者：
A. Tsurumaki‐Fukuchi;H. Yamada;A. Sawa
我们研究了后热退火对SrRuO 3/LaFeO 3/Bi 1 −δ FeO 3/SrRuO 3介电/铁电复合器件阻变特性的影响。85 °C以上的退火增强了器件的电流-电压特性的滞后，导致阻变比的增加。在200 °C下热退火后，具有较厚LaFeO 3层的器件表现出较大的电阻转换比，并且电阻转换比的器件间变化随着LaFeO 3层厚度的增加而减小。脉冲电压感应电阻开关特性，如电阻开关比和开关速度，也提高了后热退火。
We have investigated the effects of post-thermal annealing on the resistive switching characteristics of dielectric/ferroelectric composite devices of SrRuO3/LaFeO3/Bi1−δFeO3/SrRuO3. Annealing of the devices above 85 °C enhanced the hysteresis of the current–voltage characteristics, resulting in an increase in the resistive switching ratio. After post-thermal annealing at 200 °C, devices with a thicker LaFeO3 layer exhibited a larger resistive switching ratio, and the device-to-device variation in the resistive switching ratio decreased as the LaFeO3-layer thickness was increased. The pulsed-voltage-induced resistive switching characteristics, such as the resistive switching ratio and the switching speed, were also improved by post-thermal annealing.