Reduced surface electron accumulation at InN films by ozone induced oxidation
Reduced surface electron accumulation at InN films by ozone induced oxidation
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DOI：
10.1063/1.2721365
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发表时间：
2007-04
影响因子：
4
通讯作者：
V. Cimalla;V. Lebedev;Ch. Y. Wang;M. Ali;G. Ecke;V. Polyakov;F. Schwierz;O. Ambacher;H. Lu;W. Schaff
中科院分区：
文献类型：
--
作者：
V. Cimalla;V. Lebedev;Ch. Y. Wang;M. Ali;G. Ecke;V. Polyakov;F. Schwierz;O. Ambacher;H. Lu;W. Schaff
提出了一种室温臭氧诱导氧化InN薄膜以改善其电输运性质的方法。片载流子密度在氧化时降低了一个值，该值与未处理的InN表面的电子浓度的数量级相同。因此，臭氧可以有效地钝化InN的表面缺陷态，这可能是一种制备InN薄膜的有效方法。考虑到InN层的表面能带弯曲和表面电子对净迁移率的影响降低，提出了一个改进的电子输运性质的模型。
A room temperature ozone induced oxidation of thin InN films is proposed to improve the electric transport properties. The sheet carrier density is reduced upon oxidation by a value which is in the order of the electron concentration of an untreated InN surface. Thus, ozone effectively passivates the surface defect states on InN and might be an effective method to prepare InN films for electronic applications. A model for the improved electron transport properties is proposed taking into account the decreased surface band bending and the decreased influence of surface electrons on the net mobility of InN layers.