Deposition of thin films of cobalt oxides by MOCVD
Deposition of thin films of cobalt oxides by MOCVD
复制标题
DOI：
10.1039/b211861k
复制
发表时间：
2003-03
影响因子：
--
通讯作者：
A. Gulino;G. Fiorito;I. Fragalà
中科院分区：
文献类型：
--
作者：
A. Gulino;G. Fiorito;I. Fragalà
Co（hfa）2·2 H2O（hfa = CF 3 C（O）CHC（O）CF 3）前体用于MOCVD实验，以在光学透明的SiO2衬底上存款钴氧化物。根据所采用的沉积条件，获得了CoO和Co3O4薄膜。XRD测量提供的证据表明，CoO由立方，（100）取向的晶体，而Co3O4薄膜只是部分沿（311）方向沿着取向。平均晶粒尺寸进行了评价，从XRD谱线展宽和Co3O4的带隙确定从光诱导跃迁。Co_3O_4薄膜的光学光谱和电阻率测量结果表明，它们是半导电的。用XPS研究了薄膜的表面结构。
The Co(hfa)2·2H2O (hfa = CF3C(O)CHC(O)CF3) precursor was used in MOCVD experiments to deposit cobalt oxides, on optically transparent SiO2 substrates. CoO and Co3O4 films have been obtained depending on the adopted deposition conditions. XRD measurements provided evidence that CoO consists of cubic, (100) oriented crystals, whilst Co3O4 films are only partially oriented along the (311) direction. Mean crystallite sizes were evaluated from the XRD line broadening and the band-gap for Co3O4 was determined from the optically induced transitions. Both optical spectra and resistivity measurements of Co3O4 thin films showed that they are semi-conducting. The surface structure of the films was investigated by XPS.