Enhancement of 1.54 μm photoluminescence observed in Al-doped β-FeSi2
Enhancement of 1.54 μm photoluminescence observed in Al-doped β-FeSi2
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DOI：
10.1063/1.1646215
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发表时间：
2004-02-09
影响因子：
4
通讯作者：
Maeda, Y
中科院分区：
文献类型：
--
作者：
Terai, Y;Maeda, Y
本文报道了离子束合成掺杂（Al，Mn，Co）的β-FeSi 2的光致发光（PL）特性。β-Fe（Si 1-xAlx）（2）样品的光致发光强度和非辐射复合激活能（E-a）均有所增加，而β-（Fe 1-xMnx）Si-2和β-（Fe 1-xCox）Si-2样品的光致发光强度和E-a有所降低。我们发现，占据β-FeSi 2中Si位点的Al原子的掺杂可以有效增强1.54 μ m的光致发光。(C)2004年，美国物理学会。
We present photoluminescence (PL) properties of impurity (Al, Mn, Co)-doped beta-FeSi2 produced by ion-beam synthesis. The beta-Fe(Si1-xAlx)(2) sample showed an increase of both the PL intensity and activation energy (E-a) for a nonradiative recombination path. On the contrary, the beta-(Fe1-xMnx)Si-2 and the beta-(Fe1-xCox)Si-2 samples reduced the PL intensity and E-a. We found that the doping of Al atoms occupying the Si sites in beta-FeSi2 is effective to enhance the 1.54 mum photoluminescence. (C) 2004 American Institute of Physics.