Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
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采用艾迈斯半导体 H18 高压工艺制造的中子辐照 CMOS 传感器的辐射硬度研究
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Muenstermann
中科院分区：
文献类型：
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作者：
M. F. García;C. Gallrapp;M. Moll;D. Muenstermann
高压CMOS探测器（HVCMOSv 3）采用艾迈斯半导体H18高压工艺制造，衬底电阻率为10 Ω·cm，用中子辐照，中子注量高达2 × 1016 neq/cm 2，并使用边缘TCT进行表征。结果表明，在测量的注量范围内，探测器的激活区和收集电荷在7 × 1015 neq/cm ~ 2处达到最大值，在2 × 1016 neq/cm ~ 2后下降到未辐照探测器的水平。
High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 1015 neq/cm2 to decrease to the level of the unirradiated detector after 2 × 1016 neq/cm2.