Pulsed Laser Segregation of C60 from SiC
Pulsed Laser Segregation of C60 from SiC
复制标题
C60 与 SiC 的脉冲激光分离
DOI：
10.1143/jjap.34.3720
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发表时间：
1995
影响因子：
1.5
通讯作者：
Mamoru Yoshimoto Mamoru Yoshimoto
中科院分区：
文献类型：
--
作者：
H. Koinuma;Min;Mamoru Yoshimoto Mamoru Yoshimoto
脉冲激光沉积SiC薄膜的质谱分析使我们偶然发现，由于脉冲KrF准分子激光烧蚀，烧结的SiC固体形成了C60。微拉曼光谱表明，激光沉积的SiC薄膜中存在富碳畴和富硅畴的相分离或成分偏析。从其他金属碳化物如TiC和WC，也可以用同样的方法生产C60。因此，脉冲准分子激光烧蚀不仅为制备C60提供了一条新的途径，而且在固体溶液的激光分离或蒸馏方面具有独特的适用性。
The mass spectrometry of pulsed-laser-deposited SiC films led us to the serendipitous discovery of C60 formation from sintered SiC solid due to pulsed KrF excimer laser ablation. Micro-Raman spectroscopy indicates a phase separation or compositional segregation into carbon-rich and Si-rich domains in the laser-deposited SiC films. From other metal carbides such as TiC and WC, C60 could also be produced in the same way. Thus, the pulsed excimer laser ablation is found to provide not only a new route to C60 but also a unique applicability for laser segregation or distillation of solid solutions.