Influence of doping on the reliability of AlGaInP LEDs
Influence of doping on the reliability of AlGaInP LEDs
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DOI：
10.1007/s10854-008-9575-7
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发表时间：
2008-02
期刊：
影响因子：
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通讯作者：
P. Altieri-Weimar;A. Jaeger;T. Lutz;P. Stauss;K. Streubel;K. Thonke;R. Sauer
中科院分区：
文献类型：
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作者：
P. Altieri-Weimar;A. Jaeger;T. Lutz;P. Stauss;K. Streubel;K. Thonke;R. Sauer
研究了红橙色AlGaInP发光二极管（led）的老化行为。研究发现，镁、碲的掺杂量以及氧的掺入量对器件的降解有影响。在工作过程中，有源层中非辐射复合中心的产生是导致LED光输出减少的原因。光老化动力学以及降解过程中出现的非辐射复合中心的构型取决于掺杂的种类。高应力温度会加速器件的劣化。对于富te器件的老化，确定了降解过程的活化能为660 meV。利用深能级瞬态光谱研究了非辐射复合中心的性质。在老化设备中发现了四个深陷阱。在所有老化器件中都发现一个活化能约为1 eV的陷阱。在富氧老化器件中，观察到一个额外的深阱，其活化能略低。在老化的富te装置中，在降解过程中会出现两个额外的较浅陷阱。
The aging behavior of red-orange AlGaInP light-emitting diodes (LEDs) is investigated. It is found that the amount of magnesium and tellurium doping as well as of the oxygen incorporation influence the device degradation. The generation of non-radiative recombination centers in the active layer is responsible for the decrease of the LED light output during operation. The kinetics of the light aging as well as the configuration of the non-radiative recombination centers emerging during degradation depend on the doping species. High stress temperatures can accelerate the device degradation. For the aging of Te-rich device, the activation energy of 660 meV for the degradation process is determined. Deep level transient spectroscopy is used to investigate the properties of the non-radiative recombination centers. Four deep traps are detected in aged devices. One trap with activation energy of about 1 eV is found in all aged devices. In the aged O-rich device, one additional deep trap is observed with slightly lower activation energy. In the aged Te-rich device two additional shallower traps emerge during degradation.