Highly directed emission from self-assembled quantum dots into guided modes in disordered photonic-crystal waveguides
Highly directed emission from self-assembled quantum dots into guided modes in disordered photonic-crystal waveguides
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DOI：
10.1103/physrevb.90.115310
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发表时间：
2014-09-24
影响因子：
3.7
通讯作者：
Finley, J. J.
中科院分区：
文献类型：
--
作者：
Reichert, T.;Lichtmannecker, S.;Finley, J. J.
我们探讨了GaAs二维光子晶体波导中自组装In（Ga）As量子点到横向电偏振导模的自发辐射的动力学和方向性。本地的波导模式的群速度进行探测，与低至类似的1.5% C测量接近慢光带边缘的值。通过执行互补的连续波和时间分辨的测量与检测沿着和垂直于波导轴，我们探测到的发射到波导模式（β因子）的分数。对于随机放置在光子晶体波导的晶胞内的点，我们的结果表明，发射速率从接近慢光带边缘的>= 1.55 ns（-1）到
We explore the dynamics and directionality of spontaneous emission from self-assembled In(Ga)As quantum dots into transverse-electric-polarized guided modes in GaAs two-dimensional photonic-crystal waveguides. The local group velocity of the guided waveguide mode is probed, with values as low as similar to 1.5% c measured close to the slow-light band edge. By performing complementary continuous-wave and time-resolved measurements with detection along and perpendicular to the waveguide axis, we probe the fraction of emission into the waveguide mode (beta factor). For dots randomly positioned within the unit cell of the photonic-crystal waveguide, our results show that the emission rate varies from >= 1.55 ns(-1) close to the slow-light band edge to