Planar gunn diode characterisation and resonator elements to realise oscillator circuits

Planar gunn diode characterisation and resonator elements to realise oscillator circuits
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DOI：
10.1109/icanmeet.2013.6609384
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发表时间：
2013-07
期刊：
International Conference on Advanced Nanomaterials & Emerging Engineering Technologies
影响因子：
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通讯作者：
M. Ismaeel Maricar;J. Glover;G. Evans;A. Khalid;V. Papageorgiou;Li Chong;G. Dunn;A. Stephen;M. Montes Bajo;Martin Kuball;D. Cumming;C. Oxley
M. Ismaeel Maricar;J. Glover;G. Evans;A. Khalid;V. Papageorgiou;Li Chong;G. Dunn;A. Stephen;M. Montes Bajo;Martin Kuball;D. Cumming;C. Oxley
中科院分区：
其他
文献类型：
--
作者：
M. Ismaeel Maricar;J. Glover;G. Evans;A. Khalid;V. Papageorgiou;Li Chong;G. Dunn;A. Stephen;M. Montes Bajo;Martin Kuball;D. Cumming;C. Oxley

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The paper describes the planar Gunn diode, which is a device well suited to provide milli-metric and tera-hertz sources using microwave monolithic integrated circuit technologies. Different planar Gunn electrode geometries are described along with DC, RF and thermal characterisation. To realize the planar high frequency sources there is requirement for high frequency planar resonators, the paper will describe both the radial and new diamond shaped geometries.