$RC$ Model for Frequency Dependence of Split $C\hbox{--}V$ Measurements on Bare SOI Wafers
$RC$ Model for Frequency Dependence of Split $C\hbox{--}V$ Measurements on Bare SOI Wafers
复制标题
裸 SOI 晶圆上分割 $Chbox{--}V$ 测量的 $RC$ 模型的频率依赖性
DOI：
10.1109/led.2013.2257663
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发表时间：
2013
影响因子：
4.9
通讯作者：
S. Cristoloveanu
中科院分区：
文献类型：
--
作者：
A. Diab;I. Ionica;G. Ghibaudo;S. Cristoloveanu
分割C-V测量的可行性，直接评估在制造的绝缘体上硅晶圆载流子迁移率已被证明。在这里，我们通过模拟电容曲线的频率依赖性来完成这封信。伪MOSFET （Ψ-MOSFET）配置相对于标准MOSFET的特殊性来自于移动载波在源极和漏极触点之外的可能分布。这意味着电荷扩展和电容随频率的变化，我们用RC低通滤波器模型来解决这个问题。实验用一个和两个探针测量了C-V，以验证所提出的模型。
The feasibility of split C-V measurements for direct evaluation of carrier mobility in as-fabricated silicon-on-insulator wafers has been demonstrated. Here, we complete this letter by modeling the frequency dependence of capacitance curves. The peculiarity of the pseudo-MOSFET (Ψ-MOSFET) configuration with respect to standard MOSFET comes from the possible distribution of mobile carriers beyond the source and drain contacts. This implies a variation in charge spreading and capacitance with frequency that we address with an RC low-pass filter model. Experimental C-V measurements with one and two probes were used for validation of the proposed model.