Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching
Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching
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DOI：
10.1021/acsaelm.3c00079
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发表时间：
2023-03-08
影响因子：
4.7
通讯作者：
Vogel, Eric M.
中科院分区：
文献类型：
--
作者：
Basnet, Pradip;Anderson, Erik C.;Vogel, Eric M.
了解基于氧化物的忆阻器件的电阻切换行为对于评估其在非易失性存储器和/或人工神经网络中的有用性至关重要。氧化物忆阻器通常采用双层或多层金属氧化物薄膜，以与具有单个金属氧化物有源层的器件相比提高性能。然而，导致氧化物薄膜的特定组合的性能改善的机制的清晰理解仍然缺失。在此，我们制作了两种类型的双层异质结构器件，HfOx/AlOy和AlOy/HfOx双层薄膜夹在Au电极之间。这些双层器件的电响应揭示了一个数字设置和模拟复位过渡过程。单层HfOx和AlOy器件也作为对照样品进行检查，以验证开关机制。双层异质结构的作用进行了研究，使用实验和模拟结果。我们的研究结果表明，协同开关性能可以实现这些材料的适当组合，优化的结构，和适当的测试条件。这些结果为设计用于模拟响应的更有效的双层或多层忆阻器件开辟了途径。
Understanding the resistance switching behavior of oxide-based memristive devices is critical for evaluating their usefulness in nonvolatile memory and/or in artificial neural networks. Oxide memristors often employ bi-or multilayered metal oxide thin films for improved performance compared to devices with a single-metal-oxide active layer. However, a clear understanding of the mechanisms that lead to improved performance for specific combinations of oxide thin films is still missing. Herein, we fabricated two types of bilayered heterostructure devices, with HfOx/AlOy and AlOy/HfOx bilayer films sandwiched between Au electrodes. Electrical responses of these bilayer devices reveal a digital set and an analog reset transition process. Single-layer HfOx and AlOy devices are also examined as control samples to validate the switching mechanism. The role of bilayered heterostructures is investigated using both the experimental and simulated results. Our results suggest that synergistic switching performance can be achieved with a proper combination of these materials, optimized structures, and proper test conditions. These results open the avenue for designing more efficient double-or multilayered memristive devices for an analog response.